Effect of Se Isoelectronic Impurity on the Luminescence Features of the ZnO

被引：8

作者：

Khomyak, V. ^{[1
]}

Slyotov, M. ^{[1
]}

Shtepliuk, I. ^{[2
]}

Slyotov, O. ^{[1
]}

Kosolovskiy, V. ^{[1
]}

机构：

[1] Yu Fedkovich Chernivtsi Natl Univ, UA-58012 Chernovtsy, Ukraine

[2] NASU, Frantsevich Inst Problems Mat Sci, UA-03680 Kiev 142, Ukraine

来源：

ACTA PHYSICA POLONICA A | 2012年 / 122卷 / 06期

关键词：

BINDING;

D O I：

10.12693/APhysPolA.122.1039

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Se-doped ZnO films have been deposited on the sapphire substrates by the radio-frequency magnetron sputtering technique. An influence of the isoelectronic impurity Se on the room-temperature luminescence of the ZnO films is studied. It is revealed that the Se doping leads to an appearance of the intense near-band edge emission spectrum, which consists of three emission bands. The dominant emission band is related to the recombination of the bound excitons. The radiation caused by the band-to-band transitions of free carriers is observed in the high-energy side of the spectrum ((h) over bar omega > E-g).

引用

页码：1039 / 1041

页数：3