A Novel Double-Density Hemi-Cylindrical (HC) Structure to Produce More than Double Memory Density Enhancement for 3D NAND Flash

被引：8

作者：

Lue, Hang-Ting ^{[1
]}

Yeh, Teng-Hao ^{[1
]}

Du, Pei-Ying ^{[1
]}

Lo, Roger ^{[1
]}

Chen, Wei-Chen ^{[1
]}

Hsu, Tzu-Hsuan ^{[1
]}

Huang, Chiatze ^{[1
]}

Lee, Guan-Ru ^{[1
]}

Chen, Chih-Ping ^{[1
]}

Jiang, Yu-Wei ^{[1
]}

Hung, Min-Feng ^{[1
]}

Su, Yan-Ru ^{[1
]}

Liang, Li-Yang ^{[1
]}

Hu, Chih-Wei ^{[1
]}

Chiu, Chia-Jung ^{[1
]}

Wang, Keh-Chung ^{[1
]}

Lu, Chih-Yuan ^{[1
]}

机构：

[1] Macronix Int Co Ltd, Emerging Cent Lab, 16 Li Hsin Rd,Hsinchu Sci Pk, Hsinchu, Taiwan

来源：

2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2019年

关键词：

D O I：

10.1109/iedm19573.2019.8993461

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel hemi-cylindrical (HC) 3D NAND Flash architecture is demonstrated for the first time. HC 3D NAND squeezes the gate-all-around (GAA) hole in one direction, followed by a slit cut to split the GAA device to produce twin cells. It creates 2.6 times of memory density increase than standard GAA 3D NAND at the same stacking layer. Both experimental and simulation results clarify that the "non-local" effect of channel potential can essentially "smooth" the non-uniform curvature effect thus the HC 3D NAND device possesses regular P/E window characteristics even it is not a regular shape of GAA. Good 100K PE cycling endurance and post 10K-cycled 150C retention are demonstrated. HC 3D NAND structure has potential to further scale 3D NAND device in lateral dimension, with the advances of processing technologies.

引用

页数：4

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