ZnCdSe/ZnCdMgSe Quantum Well Infrared Photodetector

被引：0

作者：

Ravikumar, Arvind Pawan ^{[1
]}

Alfaro-Martinez, Adrian ^{[2
]}

Chen, Guopeng ^{[3
]}

Zhao, Kaile ^{[3
]}

Tamargo, Maria C. ^{[2
]}

Gmachl, Claire ^{[1
]}

Shen, Aidong ^{[3
]}

机构：

[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

[2] CUNY City Coll, Dept Chem, New York, NY 10031 USA

[3] CUNY City Coll, Dept Elect Engn, New York, NY 10031 USA

来源：

2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2012年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the design, fabrication and characterization of a II-VI ZnCdSe/ZnCdMgSe quantum well infrared photodetector with a bound to quasi-bound transition centered at 8.7 mu m. Absorption, photocurrent measurements yield results consistent with conventional III-V QWIPs.

引用

页数：2

共 6 条

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[5] High operating temperature 320x256 middle-wavelength infrared focal plane array imaging based on an InAs/InGaAs/InAlAs/InP quantum dot infrared photodetector
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[J]. APPLIED PHYSICS LETTERS, 2007, 90 (20)
[6] Room temperature and narrow intersubband electroluminescence from ZnCdSe/ZnCdMgSe quantum cascade laser structures
Yao, Yu
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[J]. APPLIED PHYSICS LETTERS, 2011, 99 (04)

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