Thermoluminescence studies on γ-irradiated Mn:Li2B4O7 single crystals
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作者:
Kar, S.
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Raja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, IndiaRaja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, India
Kar, S.
[1
]
Bairagi, S.
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Vikram Univ, Dept Phys, Ujjain, Madhya Pradesh, IndiaRaja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, India
Bairagi, S.
[2
]
Debnath, C.
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Raja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, IndiaRaja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, India
Debnath, C.
[1
]
Verma, S.
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Raja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, IndiaRaja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, India
Verma, S.
[1
]
Bartwal, K. S.
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Raja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, IndiaRaja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, India
Bartwal, K. S.
[1
]
机构:
[1] Raja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, India
[2] Vikram Univ, Dept Phys, Ujjain, Madhya Pradesh, India
Manganese doped Li2B4O7 (LTB) crystals were grown by Czochralski technique and various kinetic parameter of thermoluminescence (TL) were measured. Crystals were irradiated with different gamma-dose using Co-60 source. Thermoluminescence curves were recorded at various heating rates. Trap depth and frequency factor were calculated. Fading of Mn: Li2B4O7 was found only similar to 5%-6% in 6 months. Thermoluminescence intensity of Mn: Li2B4O7 was found highly sensitive to the mass of the material, and it varies abruptly with mass change of +/- 1 mg, irradiated with the same dose. Therefore, the accuracy in mass is important parameter for thermoluminescence dosimeter badge. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4747147]
机构:
Hosp Santa Maria, Serv Radioterapia, P-1049035 Lisbon, Portugal
Nucl Phys Ctr, P-1049003 Lisbon, Portugal
Escola Super Tecnol Mar, Inst Politec Leiria, P-2520631 Peniche, PortugalHosp Santa Maria, Serv Radioterapia, P-1049035 Lisbon, Portugal
Fernandes, A. C.
Osvay, M.
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Inst Isotopes, H-1525 Budapest, HungaryHosp Santa Maria, Serv Radioterapia, P-1049035 Lisbon, Portugal
Osvay, M.
Santos, J. P.
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Nucl & Technol Inst, P-2686953 Sacavem, PortugalHosp Santa Maria, Serv Radioterapia, P-1049035 Lisbon, Portugal
Santos, J. P.
Holovey, V.
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NASU, Inst Elect Phys, UA-88000 Uzhgorod, UkraineHosp Santa Maria, Serv Radioterapia, P-1049035 Lisbon, Portugal
Holovey, V.
Ignatovych, M.
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NASU, Inst Surface Chem, UA-03164 Kiev, UkraineHosp Santa Maria, Serv Radioterapia, P-1049035 Lisbon, Portugal
机构:
Raja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, IndiaRaja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, India
Kar, S.
Bartwal, K. S.
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h-index: 0
机构:
Raja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, IndiaRaja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, India
机构:
Hosp Santa Maria, Serv Radioterapia, P-1049035 Lisbon, Portugal
Nucl Phys Ctr, P-1049003 Lisbon, Portugal
Escola Super Tecnol Mar, Inst Politec Leiria, P-2520631 Peniche, PortugalHosp Santa Maria, Serv Radioterapia, P-1049035 Lisbon, Portugal
Fernandes, A. C.
Osvay, M.
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h-index: 0
机构:
Inst Isotopes, H-1525 Budapest, HungaryHosp Santa Maria, Serv Radioterapia, P-1049035 Lisbon, Portugal
Osvay, M.
Santos, J. P.
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h-index: 0
机构:
Nucl & Technol Inst, P-2686953 Sacavem, PortugalHosp Santa Maria, Serv Radioterapia, P-1049035 Lisbon, Portugal
Santos, J. P.
Holovey, V.
论文数: 0引用数: 0
h-index: 0
机构:
NASU, Inst Elect Phys, UA-88000 Uzhgorod, UkraineHosp Santa Maria, Serv Radioterapia, P-1049035 Lisbon, Portugal
Holovey, V.
Ignatovych, M.
论文数: 0引用数: 0
h-index: 0
机构:
NASU, Inst Surface Chem, UA-03164 Kiev, UkraineHosp Santa Maria, Serv Radioterapia, P-1049035 Lisbon, Portugal
机构:
Raja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, IndiaRaja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, India
Kar, S.
Bartwal, K. S.
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h-index: 0
机构:
Raja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, IndiaRaja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, India