Inelastic tunneling through mesoscopic structures

被引:72
作者
Haule, K [1 ]
Bonca, J
机构
[1] Jozef Stefan Inst, Ljubljana, Slovenia
[2] Univ Ljubljana, FMF, Ljubljana, Slovenia
来源
PHYSICAL REVIEW B | 1999年 / 59卷 / 20期
关键词
D O I
10.1103/PhysRevB.59.13087
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Our objective is to study resonant tunneling of an electron in the presence of inelastic scattering by optical phonons. Using a recently developed technique, based on exact mapping of a many-body problem onto a one-body problem, we compute transmission through a single site at finite temperatures. We also compute current through a single site at finite temperatures and an arbitrary strength of the potential drop over the tunneling region. Transmission vs incident electron energy at finite temperatures displays additional peaks due to phonon absorption processes. Current at a voltage bias smaller than the phonon frequency is dominated by elastic processes. We apply the method to an electron tunneling through the Aharonov-Bohm ring coupled to optical phonons. The elastic part of electron-phonon scattering does not affect the phase of the electron. Dephasing occurs only through inelastic processes. [S0163-1829(99)11819-8].
引用
收藏
页码:13087 / 13093
页数:7
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