The Mean Projected Range and Range Straggling of Er Ions Implanted in 6h Silicon Carbide

被引：0
|
作者：
Qin, Xi-Feng [1 ]
Wang, Hui-Ning [2 ]
Ji, Zi-Wu [2 ]
Wang, Feng-Xiang [1 ]
Fu, Gang [1 ]
机构：
[1] Shandong Jian Zhu Univ, Sch Sci, Jinan 250101, Peoples R China
[2] Shandong Univ, Sch Phys & State Key Lab Crystal Mat, Jinan 250100, Peoples R China
来源：
ADVANCED MATERIALS RESEARCH II, PTS 1 AND 2 | 2012年 / 463-464卷
基金：
中国国家自然科学基金;
关键词：
Er ion implantation; 6H-SiC; projected range; range straggling; Rutherford backscattering technique; LUMINESCENCE;
D O I：
10.4028/www.scientific.net/AMR.463-464.798
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Due to the need to reduce electronic device sizes, it is very important to consider the depth distribution of ions implanted into a crystalline target. The mean projected ranges and range straggling for energetic 200-500 keV Er ions implanted in 6H-SiC were measured by means of Rutherford backscattering followed by spectrum analysis. The measured values are compared with Monte Carlo code (SRIM2010) calculations. It has been found that the measured values of the mean projected range R-p are good agreement with the SRIM calculated values; for the range straggling Delta R-p, the difference between the experiment data and the calculated results is much higher than that of R-p.
引用
收藏
页码：798 / +
页数：2
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