Batch derivation of piezoresistive coefficient tensor by matrix algebra

被引:5
作者
Bao, MH [1 ]
Huang, YP [1 ]
机构
[1] Fudan Univ, Dept Microelect, State Key Labs ASIC & Syst, Shanghai 200433, Peoples R China
关键词
D O I
10.1088/0960-1317/14/3/003
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
To commemorate the important discovery of the piezoresistance effect of germanium and silicon by C S Smith half a century ago, we present a new method of deriving the piezoresistive (PR) coefficient tensor for diamond structure material using matrix algebra. Using this method, all the components of the PR coefficient tensor (of the fourth rank) in an arbitrary Cartesian coordinate system can be obtained in a batch and the relation between the components is clearly shown.
引用
收藏
页码:332 / 334
页数:3
相关论文
共 4 条
[1]  
BAO MH, 2000, HDB SENSORS ACTUATOR, V8, pCH5
[2]   SEMICONDUCTING STRESS TRANSDUCERS UTILIZING TRANSVERSE AND SHEAR PIEZORESISTANCE EFFECTS [J].
PFANN, WG ;
THURSTON, RN .
JOURNAL OF APPLIED PHYSICS, 1961, 32 (10) :2008-&
[3]  
SMITH CS, 1958, SOLID STATE PHYS, V6, P175
[4]   PIEZORESISTANCE EFFECT IN GERMANIUM AND SILICON [J].
SMITH, CS .
PHYSICAL REVIEW, 1954, 94 (01) :42-49