Ferromagnetic Mn5Ge3C0.8 contacts on Ge: work function and specific contact resistivity

被引：10

作者：

Fischer, I. A. ^{[1
]}

Gebauer, J. ^{[1
]}

Rolseth, E. ^{[1
]}

Winkel, P. ^{[2
]}

Chang, L-T ^{[3
]}

Wang, K. L. ^{[3
]}

Suergers, C. ^{[2
]}

Schulze, J. ^{[1
]}

机构：

[1] Univ Stuttgart, Inst Halbleitertech IHT, D-70569 Stuttgart, Germany

[2] Karlsruhe Inst Technol, Phys Inst, D-76131 Karlsruhe, Germany

[3] Univ Calif Los Angeles, Device Res Lab, Dept Elect Engn, Los Angeles, CA 90095 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2013年 / 28卷 / 12期

关键词：

ELECTRICAL SPIN-INJECTION; METAL;

D O I：

10.1088/0268-1242/28/12/125002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the study of the electrical and magnetic properties of Mn5Ge3C0.8 contacts deposited on highly doped n-Ge (1 0 0) as a potentially complementary metal-oxide-semiconductor (CMOS)-compatible material system for spin injection into Ge. Mn5Ge3C0.8 is a ferromagnet with a Curie temperature of 445 K and with a resistivity that is comparable to highly doped Ge. We extract the work function of Mn5Ge3C0.8 from metal-oxide-semiconductor capacitance measurements and obtain a specific contact resistivity r(C) = 5.0 Omega cm(2) from transmission-line measurements. We discuss possible origins of the large specific contact resistivity of Mn5Ge3C0.8 on Ge.

引用

页数：5

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