Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures

被引：79

作者：

Paladugu, Mohanchand ^{[1
]}

Zou, Jin ^{[1
,2
]}

Guo, Ya-Nan ^{[1
]}

Zhang, Xin ^{[1
]}

Kim, Yong ^{[3
]}

Joyce, Hannah J. ^{[4
]}

Gao, Qiang ^{[4
]}

Tan, H. Hoe ^{[4
]}

Jagadish, C. ^{[4
]}

机构：

[1] Univ Queensland, Sch Engn, St Lucia, Qld 4072, Australia

[2] Univ Queensland, Ctr Microscopy & Microanal, St Lucia, Qld 4072, Australia

[3] Dong A Univ, Dept Phys, Pusan 604714, South Korea

[4] Australian Natl Univ, Dept Elect Mat Engn, Res Sch Phys Sci & Engn, Canberra, ACT 0200, Australia

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 10期

基金：

澳大利亚研究理事会;

关键词：

D O I：

10.1063/1.2978959

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The structural and compositional characteristics of heterointerfaces of Au-catalyzed GaAs/InAs and InAs/GaAs axial nanowire heterostructures were comprehensively investigated by transmission electron microscopy. It has been found that the GaAs/InAs interface is not sharp and contains an InGaAs transition segment, and in contrast, the InAs/GaAs interface is atomically sharp. This difference in the nature of heterointerfaces can be attributed to the difference in the affinity of the group III elements with the catalyst material. (C) 2008 American Institute of Physics.

引用

页数：3

共 50 条

[21] GROWTH OF [211]-ORIENTED INAS/GAAS HETEROSTRUCTURES
ILG, M
BRANDT, O
NOTZEL, R
PLOOG, K
JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) : 927 - 931
[22] Electronic properties of InAs/GaAs nanowire superlattices
Niquet, Y. M.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2007, 37 (1-2): : 204 - 207
[23] Temperature-dependent modulated reflectance and photoluminescence of InAs–GaAs and InAs–InGaAs–GaAs quantum dot heterostructures
Andrius Rimkus
Evelina Pozingytė
Ramūnas Nedzinskas
Bronislovas Čechavičius
Julius Kavaliauskas
Gintaras Valušis
Lianhe Li
Edmund H. Linfield
Optical and Quantum Electronics, 2016, 48
[24] Electronic and optical properties of InAs/GaAs nanowire superlattices
Niquet, Y. M.
PHYSICAL REVIEW B, 2006, 74 (15):
[25] Photoelectric properties of GaAs/InAs heterostructures with quantum dots
Zvonkov, BN
Malkina, IG
Linkova, ER
Aleshkin, VY
Karpovich, IA
Filatov, DO
SEMICONDUCTORS, 1997, 31 (09) : 941 - 946
[26] Photoelectric properties of GaAs/InAs heterostructures with quantum dots
B. N. Zvonkov
I. G. Malkina
E. R. Lin’kova
V. Ya. Aleshkin
I. A. Karpovich
D. O. Filatov
Semiconductors, 1997, 31 : 941 - 946
[27] Photovoltaic characteristics of InAs/InGaAs/GaAs QD heterostructures
Ngo, C. Y.
Yoon, S. F.
Loke, W. K.
Ng, T. K.
Chua, S. J.
JOURNAL OF CRYSTAL GROWTH, 2009, 311 (07) : 1885 - 1888
[28] Up-converted photoluminescence in InAs/GaAs heterostructures
Zhang, Yuwei
Kamiya, Itaru
JOURNAL OF CRYSTAL GROWTH, 2017, 477 : 54 - 58
[29] Electron mobility anisotropy in InAs/GaAs(001) heterostructures
Le, Son Phuong
Suzuki, Toshi-kazu
APPLIED PHYSICS LETTERS, 2021, 118 (18)
[30] Axial GaAs/Ga(As, Bi) nanowire heterostructures
Oliva, Miriam
Gao, Guanhui
Luna, Esperanza
Geelhaar, Lutz
Lewis, Ryan B.
NANOTECHNOLOGY, 2019, 30 (42)

← 1 2 3 4 5 →