Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures

被引：79

作者：

Paladugu, Mohanchand ^{[1
]}

Zou, Jin ^{[1
,2
]}

Guo, Ya-Nan ^{[1
]}

Zhang, Xin ^{[1
]}

Kim, Yong ^{[3
]}

Joyce, Hannah J. ^{[4
]}

Gao, Qiang ^{[4
]}

Tan, H. Hoe ^{[4
]}

Jagadish, C. ^{[4
]}

机构：

[1] Univ Queensland, Sch Engn, St Lucia, Qld 4072, Australia

[2] Univ Queensland, Ctr Microscopy & Microanal, St Lucia, Qld 4072, Australia

[3] Dong A Univ, Dept Phys, Pusan 604714, South Korea

[4] Australian Natl Univ, Dept Elect Mat Engn, Res Sch Phys Sci & Engn, Canberra, ACT 0200, Australia

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 10期

基金：

澳大利亚研究理事会;

关键词：

D O I：

10.1063/1.2978959

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The structural and compositional characteristics of heterointerfaces of Au-catalyzed GaAs/InAs and InAs/GaAs axial nanowire heterostructures were comprehensively investigated by transmission electron microscopy. It has been found that the GaAs/InAs interface is not sharp and contains an InGaAs transition segment, and in contrast, the InAs/GaAs interface is atomically sharp. This difference in the nature of heterointerfaces can be attributed to the difference in the affinity of the group III elements with the catalyst material. (C) 2008 American Institute of Physics.

引用

页数：3

共 19 条

[1] Diameter dependent growth rate and interfacial abruptness in vapor-liquid-solid Si/Si1-xGex heterostructure nanowires [J].

Clark, Trevor E. ;

Nimmatoori, Pramod ;

Lew, Kok-Keong ;

Pan, Ling ;

Redwing, Joan M. ;

Dickey, Elizabeth C. .

NANO LETTERS, 2008, 8 (04) :1246-1252

[2] A new understanding of au-assisted growth of III-V semiconductor nanowires [J].

Dick, KA ;

Deppert, K ;

Karlsson, LS ;

Wallenberg, LR ;

Samuelson, L ;

Seifert, W .

ADVANCED FUNCTIONAL MATERIALS, 2005, 15 (10) :1603-1610

[3] Failure of the vapor-liquid-solid mechanism in Au-assisted MOVPE growth of InAs nanowires [J].

Dick, KA ;

Deppert, K ;

Mårtensson, T ;

Mandl, B ;

Samuelson, L ;

Seifert, W .

NANO LETTERS, 2005, 5 (04) :761-764

[4] The morphology of axial and branched nanowire heterostructures [J].

Dick, Kimberly A. ;

Kodambaka, Suneel ;

Reuter, Mark C. ;

Deppert, Knut ;

Samuelson, Lars ;

Seifert, Werner ;

Wallenberg, L. Reine ;

Ross, Frances M. .

NANO LETTERS, 2007, 7 (06) :1817-1822

[5] Semiconductor nanowires: From self-organization to patterned growth [J].

Fan, HJ ;

Werner, P ;

Zacharias, M .

SMALL, 2006, 2 (06) :700-717

[6] Structural characteristics of GaSb/GaAs nanowire heterostructures grown by metal-organic chemical vapor deposition [J].

Guo, Y. N. ;

Zou, J. ;

Paladugu, M. ;

Wang, H. ;

Gao, Q. ;

Tan, H. H. ;

Jagadish, C. .

APPLIED PHYSICS LETTERS, 2006, 89 (23)

[7] Analysis of vapor-liquid-solid mechanism in Au-assisted GaAs nanowire growth -: art. no. 203101 [J].

Harmand, JC ;

Patriarche, G ;

Péré-Laperne, N ;

Mérat-Combes, MN ;

Travers, L ;

Glas, F .

APPLIED PHYSICS LETTERS, 2005, 87 (20) :1-3

[8] Self-organized growth of GaAs/InAs heterostructure nanocylinders by organometallic vapor phase epitaxy [J].

Hiruma, K ;

Murakoshi, H ;

Yazawa, M ;

Katsuyama, T .

JOURNAL OF CRYSTAL GROWTH, 1996, 163 (03) :226-231

[9] Germanium nanowire growth below the eutectic temperature [J].

Kodambaka, S. ;

Tersoff, J. ;

Reuter, M. C. ;

Ross, F. M. .

SCIENCE, 2007, 316 (5825) :729-732

[10]

Mieszawska AJ, 2007, SMALL, V3, P722, DOI 10.1002/smll.2006007

← 1 2 →