Towards understanding of processing-nanostructure-property inter-relationships in high-k/metal gate stacks

被引：0
作者：
Majhi, P [1 ]
Bersuker, G [1 ]
Lee, BH [1 ]
机构：
[1] SEMATECH, 2706 Montopolis Dr, Austin, TX 78741 USA
来源：
DEFECTS IN HIGH-K GATE DIELECTRIC STACKS: NANO-ELECTRONIC SEMICONDUCTOR DEVICES | 2006年 / 220卷
关键词：
metal gates; high-k; defects; effective work function;
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
This paper summarizes the challenges and opportunities that lay ahead in screening candidate metal gate electrodes and their integration in a standard CMOS process in order to replace the aging poly-Si gate electrodes. In particular, special emphasize on defects in the gate stack, its potential origin and its influence on device properties will be discussed. For example, the deleterious effects of bulk charges in high-k on effective extraction of work function of the metal gates, and influence of metal gate processing on final structure of the gate stack and its device properties is discussed in detail.
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页码：29 / +
页数：3
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