Plasma-Enhanced Atomic Layer Deposition of Nickel Nanotubes with Low Resistivity and Coherent Magnetization Dynamics for 3D Spintronics

被引：15

作者：

Giordano, M. C. ^{[1
]}

Baumgaertl, K. ^{[1
]}

Steinvall, S. Escobar ^{[2
]}

Gay, J. ^{[1
]}

Vuichard, M. ^{[1
]}

Fontcuberta i Morral, A. ^{[2
,3
]}

Grundler, D. ^{[4
,5
]}

机构：

[1] Ecole Polytech Fed Lausanne EPFL, Sch Engn, Inst Mat, Lab Nanoscale Magnet Mat & Magnon, CH-1015 Lausanne, Switzerland

[2] Ecole Polytech Fed Lausanne EPFL, Sch Engn, Inst Mat, Lab Semicond Mat, CH-1015 Lausanne, Switzerland

[3] Ecole Polytech Fed Lausanne EPFL, Sch Basic Sci, Inst Phys, CH-1015 Lausanne, Switzerland

[4] Ecole Polytech Fed Lausanne EPFL, Sch Engn, Inst Mat IMX, Lab Nanoscale Magnet Mat & Magnon, CH-1015 Lausanne, Switzerland

[5] Ecole Polytech Fed Lausanne EPFL, Sch Engn, Inst Microengn IMT, CH-1015 Lausanne, Switzerland

来源：

ACS APPLIED MATERIALS & INTERFACES | 2020年 / 12卷 / 36期

关键词：

atomic layer deposition; ferromagnet; nickel; nanotube; magnetoresistance; spin wave; magnonics; Brillouin light scattering microscopy; FILMS; AL2O3;

D O I：

10.1021/acsami.0c06879

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report plasma-enhanced atomic layer deposition (ALD) to prepare conformal nickel thin films and nanotubes using nickelocene as a precursor, water as the oxidant agent, and an in-cycle plasma-enhanced reduction step with hydrogen. The optimized ALD pulse sequence, combined with a post-processing annealing treatment, allowed us to prepare 30 nm-thick metallic Ni layers with a resistivity of 8 mu Omega cm at room temperature and good conformality both on the planar substrates and nanotemplates. Thus, we fabricated several micrometers-long nickel nanotubes with diameters ranging from 120 to 330 nm. We report the correlation between ALD growth and functional properties of individual Ni nanotubes characterized in terms of magnetotransport and the confinement of spin-wave modes. The findings offer novel perspectives for Ni-based spintronics and magnonic devices operated in the GHz frequency regime with 3D device architectures.

引用

页码：40443 / 40452

页数：10

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