Current dependence of electro-optical parameters in green and blue (AlIn)GaN laser diodes

被引：34

作者：

Hager, T. ^{[1
]}

Bruederl, G. ^{[1
]}

Lermer, T. ^{[1
]}

Tautz, S. ^{[1
]}

Gomez-Iglesias, A. ^{[1
]}

Mueller, J. ^{[1
]}

Avramescu, A. ^{[1
]}

Eichler, C. ^{[1
]}

Gerhard, S. ^{[1
]}

Strauss, U. ^{[1
]}

机构：

[1] OSRAM Opto Semicond GmbH, D-93055 Regensburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 17期

关键词：

GAN;

D O I：

10.1063/1.4764067

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a detailed study of laser characteristics of blue and green R&D laser diodes grown on free standing GaN substrates with c-plane orientation under forward current condition. The slope efficiency of the blue emitting device exhibits a constant value over the entire operation range. In contrast to that, the green laser shows a decrease in slope efficiency with increasing current. A reduction of slope efficiency can be caused either by increasing internal losses or decreasing injection efficiency. A series of different mirror coatings is used to correlate the decreasing slope efficiency with a slight decrease of the injection efficiency as a function of current density. Furthermore, the reduction of the injection efficiency does not depend on the junction temperature. We could also verify that the internal losses are not temperature sensitive for blue and green laser diodes. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4764067]

引用

页数：4

共 17 条

[1]

Avramescu A., 2012, 1 LAS DISPL C LDC12, P2

[2] True Green Laser Diodes at 524 nm with 50 mW Continuous Wave Output Power on c-Plane GaN [J].

Avramescu, Adrian ;

Lermer, Teresa ;

Mueller, Jens ;

Eichler, Christoph ;

Bruederl, Georg ;

Sabathil, Matthias ;

Lutgen, Stephan ;

Strauss, Uwe .

APPLIED PHYSICS EXPRESS, 2010, 3 (06)

[3]

Brueninghoff S., 2009, P SOC PHOTO-OPT INS, V7216

[4]

COLDREN LA, 1995, WILEY SERIES MICROWA

[5] Gain of blue and cyan InGaN laser diodes [J].

Lermer, T. ;

Gomez-Iglesias, A. ;

Sabathil, M. ;

Mueller, J. ;

Lutgen, S. ;

Strauss, U. ;

Pasenow, B. ;

Hader, J. ;

Moloney, J. V. ;

Koch, S. W. ;

Scheibenzuber, W. ;

Schwarz, U. T. .

APPLIED PHYSICS LETTERS, 2011, 98 (02)

[6] Gain comparison in polar and nonpolar/semipolar gallium-nitride-based laser diodes [J].

Melo, T. ;

Hu, Y-L ;

Weisbuch, C. ;

Schmidt, M. C. ;

David, A. ;

Ellis, B. ;

Poblenz, C. ;

Lin, Y-D ;

Krames, M. R. ;

Raring, J. W. .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 27 (02)

[7] 510-515 nm InGaN-Based Green Laser Diodes on c-Plane GaN Substrate [J].

Miyoshi, Takashi ;

Masui, Shingo ;

Okada, Takeshi ;

Yanamoto, Tomoya ;

Kozaki, Tokuya ;

Nagahama, Shin-ichi ;

Mukai, Takashi .

APPLIED PHYSICS EXPRESS, 2009, 2 (06)

[8] Investigation of long wavelength green InGaN lasers on c-plane GaN up to 529 nm continuous wave operation [J].

Mueller, Jens ;

Strauss, Uwe ;

Lermer, Teresa ;

Bruederl, Georg ;

Eichler, Christoph ;

Avramescu, Adrian ;

Lutgen, Stephan .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 208 (07) :1590-1592

[9] Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Sugimoto, Y ;

Kiyoku, H .

APPLIED PHYSICS LETTERS, 1996, 69 (26) :4056-4058

[10]

Raring JW, 2011, 2011 IEEE PHOTONICS CONFERENCE (PHO), P503, DOI 10.1109/PHO.2011.6110781

← 1 2 →