Stimulated emission at blue-green (480 nm) and green (514 nm) wavelengths from nonpolar (m-plane) and semipolar (11(2)over-bar2) InGaN multiple quantum well laser diode structures

被引：83

作者：

Tyagi, Anurag ^{[1
,2
]}

Lin, You-Da ^{[1
,2
]}

Cohen, Daniel A. ^{[1
,2
]}

Saito, Makoto ^{[1
,2
]}

Fujito, Kenji ^{[3
]}

Speck, James S. ^{[1
,2
]}

DenBaars, Steven P. ^{[1
,2
]}

Nakamura, Shuji ^{[1
,2
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[3] Mitsubishi Chem Corp, Optoelect Lab, Ushiku, Ibaraki 3001295, Japan

来源：

APPLIED PHYSICS EXPRESS | 2008年 / 1卷 / 09期

关键词：

D O I：

10.1143/APEX.1.091103

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Stimulated emission (SE) in the blue-green (480 nm) and green (514 nm) regime has been observed, at room temperature (RT) under optical pumping, from nonpolar m-plane (10 (1) over bar0) and semipolar (11 (2) over bar2) InGaN multi-quantum well (MQW) laser diode (LD) structures, respectively, grown on bulk GaN substrates. The emission intensity exhibited a clear threshold behavior with respect to the pump power. Optical anisotropy was also observed between the two perpendicular in-plane directions [(1) over bar(1) over bar 23] and [10 (1) over bar0] for semipolar LD structures, with significantly lower pump thresholds for emission along [(1) over bar(1) over bar 23]. The SE wavelength, measured just above threshold, was blue-shifted with respect to the spontaneous emission wavelength measured just below threshold. These initial results indicate that semipolar (11 (2) over bar2) GaN is a promising orientation for the realization of blue-green and green LDs. (C) 2008 The Japan Society of Applied Physics.

引用

页码：0911031 / 0911033

页数：3

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