GMR in high fluence ion implanted granular thin films

被引：6

作者：

Sousa, JB

de Azevedo, MMP

Rogalski, MS

Pogorelov, YG

Redondo, LM

de Jesus, CM

Marques, JG

da Silva, MF

Soares, JC

Ousset, JC

Snoeck, E

机构：

[1] Univ Porto, Fac Ciencias, Inst Fis Mat IFIMUP, P-4150 Porto, Portugal

[2] Inst Tecnol & Nucl, P-2685 Sacavem, Portugal

[3] CNRC, Serv Nat Champs Magnet Pulses, F-31077 Toulouse, France

[4] CNRS, CEMES, F-31055 Toulouse 4, France

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1999年 / 196卷

关键词：

ion implantation; thin films; granular magnetic materials; GMR;

D O I：

10.1016/S0304-8853(98)00643-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the magnetic and magnetoresistive (MR) properties of granular materials obtained by implantation of high fluences (from 1 x 10(16) to 1.8 x 10(17) ions/cm(2)) of Fe and Co ions into Cu and Ag thin films. The local microstructure vs. implantation doses and posterior thermal treatment is discussed to obtain MR values of practical relevance. MR measurements up to very high fields (32 T) are presented, supporting recent theoretical work on the role of short-range magnetic correlations in MR for granular materials. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：13 / 17

页数：5

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