Doping dependence of the critical field H-c2 and the transition temperature in Zn doped YBa2(Cu1-xZnx)(3)O7-delta

被引：21

作者：

Lawrie, DD ^{[1
]}

Franck, JP ^{[1
]}

Beamish, JR ^{[1
]}

Molz, EB ^{[1
]}

Chen, WM ^{[1
]}

Graf, MJ ^{[1
]}

机构：

[1] BOSTON COLL,DEPT PHYS,CHESTNUT HILL,MA 02167

来源：

JOURNAL OF LOW TEMPERATURE PHYSICS | 1997年 / 107卷 / 5-6期

关键词：

D O I：

10.1007/BF02397232

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present data on the doping dependence of T-c in Zn doped YBa2(Cu1-xZnx)(3)O-6.94, for x up to 10.6%. We find re-entrant behaviour in the range between 9.0 and 10.6% Zn. Data on the magneto-resistance of a sample with extremely low T-c (9% Zn, zero field resistive onset near 3.5 K) show linear normal resistance in all fields down to 1.8 K in 17.5 T. A resistively defined critical field H*, related to H-c2, shows divergent behaviour. The temperature dependence of H* is well represented by expressions derived for the Bose condensation of pre-formed pairs.

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页码：491 / 496

页数：6

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