Synthesized compact model and experimental results for substrate noise coupling in lightly doped processes

被引:0
作者
Lan, H [1 ]
Chen, TW [1 ]
Chui, CO [1 ]
Nikaeen, P [1 ]
Kim, JW [1 ]
Dutton, RW [1 ]
机构
[1] Stanford Univ, Dept Elect Engn, Ctr Integrated Syst, Stanford, CA 94305 USA
来源
CICC: PROCEEDINGS OF THE IEEE 2005 CUSTOM INTEGRATED CIRCUITS CONFERENCE | 2005年
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A synthesized compact model of substrate coupling resistance for lightly doped substrate processes is proposed. The model incorporates all geometrical parameters including geometrical mean distance with a few process-dependent fitting coefficients. The model accuracy is shown to be within 15% error using the measurement data from two test chips, one in a customized lightly doped process and the other one in a 0.18-mu m BiCMOS lightly doped process. Substrate noise distribution on a 2 mm by 2 mm chip with 319 substrate contacts is shown with the calibrated SCM model.
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页码:469 / 472
页数:4
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