Electrical and Reliability Characteristics of High-κ HoTiO3 α-InGaZnO Thin-Film Transistors

被引：31

作者：

Pan, Tung-Ming ^{[1
]}

Chen, Ching-Hung ^{[1
]}

Liu, Jiang-Hung ^{[1
]}

Her, Jim-Long ^{[2
]}

Koyama, Keiichi ^{[3
]}

机构：

[1] Chang Gung Univ, Dept Elect Engn, Tao Yuan 333, Taiwan

[2] Chang Gung Univ, Div Nat Sci, Ctr Gen Educ, Tao Yuan 333, Taiwan

[3] Kagoshima Univ, Grad Sch Sci & Engn, Kagoshima 8900065, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 01期

关键词：

Amorphous indium-gallium-zinc oxide (alpha-IGZO); HoTiO3; thin-film transistor (TFT); SURFACE-ROUGHNESS; GATE DIELECTRICS; IGZO TFTS; SM2O3;

D O I：

10.1109/LED.2013.2287349

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we investigated the electrical and reliability characteristics of high-kappa HoTiO3 amorphous indium-gallium-zinc oxide (alpha-IGZO) thin-film transistor (TFT) devices. The alpha-IGZO TFT device incorporating an HoTiO3 dielectric exhibited excellent electrical characteristics in terms of a low threshold voltage of 0.12 V, a high field-effect mobility of 21.4 cm(2)/Vs, a small subthreshold swing of 160 mV/decade, and a high I-ON/I-OFF current ratio of 1.3 x 10(8). These results are attributed to the incorporation of TiOx into the Ho2O3 film forming the smooth surface roughness and thus reducing the oxygen vacancies. Furthermore, the threshold voltage stability of HoTiO3 alpha-IGZO TFT was studied under both positive and negative bias stress conditions.

引用

页码：66 / 68

页数：3

共 20 条

[1]

[Anonymous], 2008, APPL PHYS LETT, DOI DOI 10.1063/1.3054158

[2] Effect of surface roughness on electrical characteristics in amorphous InGaZnO thin-film transistors with high-κ Sm2O3 dielectrics [J].

Chen, Fa-Hsyang ;

Hung, Meng-Ning ;

Yang, Jui-Fu ;

Kuo, Shou-Yi ;

Her, Jim-Long ;

Matsuda, Yasuhiro H. ;

Pan, Tung-Ming .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2013, 74 (04) :570-574

[3] Structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics for a-IGZO thin-film transistors [J].

Chen, Fa-Hsyang ;

Her, Jim-Long ;

Shao, Yu-Hsuan ;

Matsuda, Yasuhiro H. ;

Pan, Tung-Ming .

NANOSCALE RESEARCH LETTERS, 2013, 8 :1-5

[4]

Chen YY, 2010, ADV ENG RES, V3, P1

[5] High-Performance Flexible a-IGZO TFTs Adopting Stacked Electrodes and Transparent Polyimide-Based Nanocomposite Substrates [J].

Chien, Chih-Wei ;

Wu, Cheng-Han ;

Tsai, Yu-Tang ;

Kung, Yen-Cheng ;

Lin, Chang-Yu ;

Hsu, Po-Ching ;

Hsieh, Hsing-Hung ;

Wu, Chung-Chih ;

Yeh, Yung-Hui ;

Leu, Chyi-Ming ;

Lee, Tzong-Ming .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (05) :1440-1446

[6] High-Performance a-IGZO Thin-Film Transistor Using Ta2O5 Gate Dielectric [J].

Chiu, C. J. ;

Chang, S. P. ;

Chang, S. J. .

IEEE ELECTRON DEVICE LETTERS, 2010, 31 (11) :1245-1247

[7]

Fanciulli M., 2007, RARE EARTH OXIDE THI

[8] XPS STUDY OF THIN-FILMS OF TITANIUM OXYSULFIDES [J].

GONBEAU, D ;

GUIMON, C ;

PFISTERGUILLOUZO, G ;

LEVASSEUR, A ;

MEUNIER, G ;

DORMOY, R .

SURFACE SCIENCE, 1991, 254 (1-3) :81-89

[9] Effect of hygroscopic nature on the electrical characteristics of lanthanide oxides (Pr2O3, Sm2O3, Gd2O3, and Dy2O3) [J].

Jeon, S ;

Hwang, HS .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (10) :6393-6395

[10] Electrical and physical characteristics of PrTixOy for metal-oxide-semiconductor gate dielectric applications [J].

Jeon, S ;

Hwang, H .

APPLIED PHYSICS LETTERS, 2002, 81 (25) :4856-4858

← 1 2 →