Metal oxide semiconductor field effect transistor (MOSFET) model based on a physical high-field carrier-velocity model

We propose a carrier-velocity model dependent on the lateral electric field and based on momentum and energy balance equations. The model reproduces the corresponding experimental data more accurately than the previous Sodini's model. Using the carrier-velocity model, we derived an analytical model for expressing drain current. Our drain-current model deviates from Sodini et al.'s model with decreasing gate length. This is attributed to the difference of the carrier-velocity dependence on the lateral electric field; hence, our drain-current model should be more suitable for short-channel devices.