Disorder-induced photoluminescence up-conversion in InAs/GaAs quantum-dot samples

被引：12

作者：

Cassabois, G

Kammerer, C

Sopracase, R

Voisin, C

Delalande, C

Roussignol, P

Gérard, JM

机构：

[1] Ecole Normale Super, Phys Mat Condensee Lab, F-75231 Paris 05, France

[2] Lab Photon & Nanostruct, F-92225 Bagneux, France

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 91卷 / 08期

关键词：

D O I：

10.1063/1.1459622

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence up-conversion under cw excitation in semiconductor quantum-dot structures is systematically studied in a sample exhibiting a crossover between two-dimensional and three-dimensional (3D) growth modes. We probe the existence of carrier up-conversion by using ultrathin quantum wells close to the quantum-dot layer. We show that the efficiency of the up-conversion is closely related to the disorder induced by the 3D-growth mode of the quantum dots. (C) 2002 American Institute of Physics.

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页码：5489 / 5491

页数：3

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