Improved electrical properties of InN by high-temperature annealing with in situ capped SiNx layers

被引：4
作者：
Huang, W [1 ]
Yoshimoto, M [1 ]
Taguchi, K [1 ]
Harima, H [1 ]
Saraie, J [1 ]
机构：
[1] Kyoto Inst Technol, Dept Elect Informat Sci, Kyoto 6068585, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 1A-B期
关键词：
InN; MBE growth; annealing; in situ deposition; SiNx; electrical properties;
D O I：
10.1143/JJAP.43.L97
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have carried out the annealing of InN epilayers grown by molecular beam epitaxy and capped with in situ deposited SiNx in vacuum at 450-650degreesC. With the increase in annealing temperature, the crystallinity and carrier mobility of the InN layer clearly improved, and the residual carrier concentration of the layer decreased. Annealing without the SiNx capping layer increased the number of defects and carrier concentration, probably due to the formation of N vacancies and O incorporation.
引用
收藏
页码：L97 / L99
页数：3
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