Characteristics of a-plane GaN with the SiNx insertion layer grown by metal-organic chemical vapor deposition

被引：16

作者：

Ko, T. S. ^{[1
,2
]}

Wang, T. C. ^{[1
,2
]}

Huang, H. M. ^{[1
,2
]}

Chen, J. R. ^{[1
,2
]}

Chen, H. G. ^{[3
]}

Chu, C. P. ^{[1
,2
]}

Lu, T. C. ^{[1
,2
]}

Kuo, H. C. ^{[1
,2
]}

Wang, S. C. ^{[1
,2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30050, Taiwan

[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30050, Taiwan

[3] I Shou Univ, Dept Mat Sci & Engn, Kaohsiung 840, Taiwan

来源：

JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 23期

关键词：

Crystallities; Metalorganic chemical vapor deposition; Nitrides; Semiconducting III-V materials;

D O I：

10.1016/j.jcrysgro.2008.07.058

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We utilized in-situ-grown SiNx insertion layers to mitigate part of dislocations stretching in nonpolar a-plane GaN films using metal-organic chemical vapor deposition. Both X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements revealed that better crystal quality and smoother surface could be obtained when the in-situ SiNx layer was inserted closer to the r-plane sapphire substrate and indicated that the in-situ SiNx insertion layer could suppress dislocations caused by lattice mismatch between the sapphire and epitaxial layers. In addition, photoluminescence and cathodoluminescence measurements confirmed the effect of the in-situ SiNx insertion layer on the optical properties of the improved a-plane GaN thin film, which is consistent with the XRD and AFM analyses and suggested reduction in the density of nonradiative centers. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：4972 / 4975

页数：4

共 12 条

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