Growth study of CdS thin films deposited by chemical bath

被引:14
|
作者
Beggas, A. [1 ,2 ]
Benhaoua, B. [1 ]
Attaf, A. [2 ]
Aida, M. S. [3 ]
机构
[1] Univ El Oued, Lab VTRS, Fac Sci & Technol, El Oued 39000, Algeria
[2] Univ Biskra, Fac Sci, Biskra 07000, Algeria
[3] Freres Mentouri Univ, Dept Phys, Thin Films & Pasma Lab, Constantine 2500, Algeria
来源
OPTIK | 2016年 / 127卷 / 20期
关键词
Chalcogenides; Thin films; Chemical synthesis; FTIR; Optical properties; OPTICAL-PROPERTIES; BAND;
D O I
10.1016/j.ijleo.2016.06.030
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
CdS thin films were prepared by chemical bath deposition (CBD) technique. The bath solution is a mixture of Cadmium carbonate CdCO3 and thioureaas source of Cadmium and Sulfur respectively, ammonia was used as complexing agent. In order to investigate the deposition time; films were prepared with two deposition times 45 and 90min X-raydiffraction, UV visible spectrophotometry and Fourier transform infrared techniques are used to investigate CdS thin films and the different steps of reactions leading to CdS product. Hexagonal CdS thin films were obtained with (002) preferred orientation and having crystallite size average in the range of 14.3-30.4 nmfor the two deposition times. CdS thin films transmittance is above 70% in visible region. Band gap energy was 2.46 and 2.42 eV for both samples. Studies of different solutions and steps leading to the formation of CdS products were carried. The formation mechanism of CdS thin films was proposed based on FTIR results. (C) 2016 Elsevier GmbH. All rights reserved.
引用
收藏
页码:8423 / 8430
页数:8
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