Growth of (001) oriented La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O ferroelectric capacitors on (001) GaAs with a MgO buffer layer

被引：0

作者：

Young, D ^{[1
]}

Christou, A ^{[1
]}

Ramesh, R ^{[1
]}

Fork, DK ^{[1
]}

Krusor, B ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

INTEGRATED FERROELECTRICS | 1996年 / 12卷 / 01期

关键词：

electro-optic; GaAs; PLZT;

D O I：

10.1080/10584589608225749

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin film La0.5Sr0.5CoO3/Pb0.9La0.1Zr0.2Ti0.3O3/La0.5Sr0.5CoO3 capacitor structures (LSCO/PLZT/LSCO) have been grown on (001) GaAs substrates with MgO as a buffer layer. The MgO films on GaAs were grown by pulsed laser deposition and electron-beam evaporation and the capacitor heterostructures were grown using pulsed laser deposition. X-ray diffraction (XRD) showed all films to be (001) oriented. Ferroelectric capacitors were fabricated to determine their electrical behavior: the films showed resistivity above 10(10) ohms/cm(2), a typical saturation polarization of 20-30 mu C/cm(2), minimum retention loss, low time-dependent imprint and negligible fatigue up to 10(11) cycles. These characteristics indicate that high-quality (001) oriented PLZT can be easily integrated with GaAs substrates, and could be used to produce GaAs-based electrical and, more importantly, optical devices.

引用

页码：63 / 69

页数：7

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BORRELLI PJ, 1991, MRS FALL M

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