High-efficiency InAs/GaAs quantum dot solar cells by metalorganic chemical vapor deposition

被引：76

作者：

Tanabe, Katsuaki ^{[1
]}

Guimard, Denis ^{[1
,2
]}

Bordel, Damien ^{[1
]}

Arakawa, Yasuhiko ^{[1
,2
]}

机构：

[1] Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538505, Japan

[2] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 19期

基金：

日本学术振兴会;

关键词：

GAAS; CHARGE;

D O I：

10.1063/1.4714767

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricate a high-efficiency InAs/GaAs quantum dot (QD) solar cell. It contains five layers of high-density self-assembled InAs QDs grown by metalorganic chemical vapor deposition suppressing open-circuit-voltage (V-OC) degradation. We develop a dual-layer anti-reflection coating of optimum thicknesses. The resulting cell exhibits efficiencies of 18.7% under AM1.5G for 1 sun and 19.4% for 2 suns. Concentrator measurements demonstrate the advantage of QD use under concentrated illumination, owing to the significant increase in V-OC. We also find a V-OC offset of 0.3 V from the QD ground-state transition energies for QD cells, in contrast to 0.4 V for state-of-the-art bulk semiconductor cells. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4714767]

引用

页数：3

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