Majority Gate for Nanomagnetic Logic With Perpendicular Magnetic Anisotropy

被引:62
作者
Breitkreutz, Stephan [1 ]
Kiermaier, Josef [1 ]
Eichwald, Irina [1 ]
Ju, Xueming [2 ]
Csaba, Gyorgy [3 ]
Schmitt-Landsiedel, Doris [1 ]
Becherer, Markus [1 ]
机构
[1] Tech Univ Munich, Lehrstuhl Tech Elekt, D-80333 Munich, Germany
[2] Tech Univ Munich, Lehrstuhl Nanoelekt, D-80333 Munich, Germany
[3] Univ Notre Dame, Ctr Nano Sci & Technol, Notre Dame, IN 46556 USA
关键词
Domain wall (DW) nucleation; focused ion beam ( FIB) irradiation; majority gate; nanomagnetic logic (NML); perpendicular magnetic anisotropy (PMA); FIELD;
D O I
10.1109/TMAG.2012.2197184
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A majority gate for nanomagnetic logic with perpendicular magnetic anisotropy is presented. A novel technique of local focused ion beam irradiation generating artificial domain wall nucleation centers is used to enable directed signal flow and logic computation in an array of field-coupled nanomagnets. The switching behavior of the majority gate is characterized and logic operation is experimentally proven using magneto-optical and magnetic force microscopy. The findings are supported by numerical and micromagnetic simulations. Tolerance margins for fabrication and computing frequencies for correct operation are explored. The presented majority gate allows for complex, non-volatile logic with synchronous global clocking at room-temperature.
引用
收藏
页码:4336 / 4339
页数:4
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