Effects of 1 MeV electron beam irradiation on multilayer graphene grown on 6H-SiC(0001)

被引:40
作者
Kim, Ki-jeong [1 ,2 ]
Choi, Junghun [1 ,2 ]
Lee, Hangil [3 ]
Lee, Han-Koo [4 ]
Kang, Tai-Hee [3 ]
Han, Young-Hwan [5 ]
Lee, Byung-Cheol [5 ]
Kim, Sehun [1 ,2 ]
Kim, Bongsoo [3 ,4 ]
机构
[1] Korea Adv Inst Sci & Technol, Dept Chem, Taejon 305701, South Korea
[2] Korea Adv Inst Sci & Technol, Sch Mol Sci BK21, Taejon 305701, South Korea
[3] POSTECH, Pohang Accelerator Lab, Pohang 790784, South Korea
[4] POSTECH, Dept Phys, Pohang 790784, South Korea
[5] KAERI, Lab Quantum Opt, Taejon 705359, South Korea
关键词
D O I
10.1021/jp805141e
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Graphene layers grown on 6H-SiC(0001) were irradiated with 1 MeV electron beam to functionalize its surface. A surface analysis using atomic force microscopy, the near edge X-ray adsorption fine structure spectra of C K-edge, and photoemission spectroscopy suggests that the electron beam irradiation in ambient condition can induce oxidation of the graphene layer.
引用
收藏
页码:13062 / 13064
页数:3
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