Semi-insulating Te-saturated CdTe

被引：31

作者：

Grill, R ^{[1
]}

Franc, J ^{[1
]}

Höschl, P ^{[1
]}

Turkevych, I ^{[1
]}

Belas, E ^{[1
]}

Moravec, P ^{[1
]}

机构：

[1] Charles Univ, Fac Math & Phys, Inst Phys, CZ-12116 Prague, Czech Republic

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2005年 / 52卷 / 05期

关键词：

CdTe; deep defect; detector; self-compensation;

D O I：

10.1109/TNS.2005.856801

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The evolution of defect structure and self-compensation is theoretically studied within quasichemical formalism in undoped and donor-doped Te-saturated CdTe during the cooling in the temperature interval 700 degrees C-100 degrees C. We show, that proper thermal treatment, including low temperature (cca 200 degrees C) dwell, allows to prepare semi-insulating CdTe with deep level doping below the limit 10(13) cm(-3), which is demanded in detector industry. New high-temperature transport data are used to refine on previous native defect properties for the modeling. Variant defect models are analyzed. Diffusion rates at lowered temperature are annotated to approve the model for real-time experimental verification.

引用

页码：1925 / 1931

页数：7

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