600 V, Low-Leakage AlGaN/GaN MIS-HEMT on Bulk GaN Substrates

被引：0

作者：

Alshahed, M. ^{[1
]}

Alomari, M. ^{[1
]}

Harendt, C. ^{[1
]}

Burghartz, J. N. ^{[1
]}

Waechter, C. ^{[2
]}

Bergunde, T. ^{[2
]}

Lutgen, S. ^{[3
]}

机构：

[1] Inst Mikroelekt Stuttgart, Stuttgart, Germany

[2] AZUR SPACE Solar Power GmbH, Technol Epitaxial Mat, Heilbronn, Germany

[3] III V Semicond Consulting, Dresden, Germany

来源：

2016 46TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC) | 2016年

关键词：

bulk GaN; power devices; reliability; high voltage; BUFFER; MOCVD;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work we demonstrate, for the first time, the advantages of GaN HEMTs on bulk GaN substrates over similarly processed devices on Sapphire and Silicon substrates, intended for power applications, in terms of on-state and off-state operation as well as reliability, where self-heating, off-state leakage, and trapping effects are minimal. MIS-HEMTs with breakdown voltage of similar to 670 V and off-state leakage current below 1 mu A/mm are obtained in spite of the very basic and simple device design and technology used.

引用

页码：202 / 205

页数：4

共 43 条

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IEEE ELECTRON DEVICE LETTERS, 2013, 34 (11) : 1373 - 1375
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APPLIED PHYSICS LETTERS, 2022, 120 (17)
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