A unified model for insulator selection to form ultra-low resistivity metal-insulator-semiconductor contacts to n-Si, n-Ge, and n-InGaAs

被引：62

作者：

Agrawal, Ashish ^{[1
]}

Shukla, Nikhil ^{[1
]}

Ahmed, Khaled ^{[2
]}

Datta, Suman ^{[1
]}

机构：

[1] Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USA

[2] Appl Mat Inc, Santa Clara, CA 95054 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 04期

关键词：

Wide band gap semiconductors - Zinc oxide - MIS devices - Ohmic contacts - Semiconducting indium - Semiconducting indium gallium arsenide - Silicon compounds - Cadmium compounds - Electron transport properties - Magnetic semiconductors - Semiconductor insulator boundaries - Metal insulator boundaries - Titanium dioxide;

D O I：

10.1063/1.4739784

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A comprehensive, physics-based unified model is developed for study of low resistivity metal-insulator-semiconductor (M-I-S) ohmic contact. Reduction in metal-induced gap state density and Fermi unpinning in semiconductor as a function of insulator thickness is coupled with electron transport including tunnel resistance through the metal-insulator-semiconductor (M-I-S) system to calculate specific contact resistivity at each insulator thickness for n-Si, n-Ge, and n-InGaAs. Low conduction band offset results in similar to 1 x 10(-9) Omega-cm(2) contact resistivity with TiO2 insulator on n-Si, similar to 7 x 10(-9) Omega-cm2 can be achieved using TiO2 and ZnO on n-Ge, and similar to 6 x 10(-9) Omega-cm(2) can be achieved with CdO insulator on n-InGaAs, which meet the sub-22nm CMOS requirements. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4739784]

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