Seal formation in silicon planar patch-clamp microstructures

被引：12

作者：

Curtis, John C. ^{[1
]}

Baldwin, Keith ^{[2
]}

Dworak, Bradley J. ^{[2
]}

Stevenson, J. Tom M. ^{[2
]}

Delivopoulos, Evangelos ^{[2
]}

MacLeod, Nikki K. ^{[1
]}

Murray, Alan F. ^{[2
]}

机构：

[1] Univ Edinburgh, Ctr Integrat Physiol, Edinburgh EH8 9XD, Midlothian, Scotland

[2] Univ Edinburgh, Sch Engn & Elect, Edinburgh EH9 3JL, Midlothian, Scotland

来源：

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS | 2008年 / 17卷 / 04期

基金：

英国工程与自然科学研究理事会;

关键词：

atomic force microscopy; biomedical transducers; electrophysiology; microelectrodes; microelectromechanical devices; micromachining; N2a cells; silicon;

D O I：

10.1109/JMEMS.2008.924270

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a microfabricated planar patch-clamp electrode design and looks at the impact of several physical characteristics on seal formation. The device consists of a patch aperture, 1.5-2.5 mu m in diameter and 7-12 mu m in depth, with a reverse-side deep-etched 80-mu m well. The patch aperture was coated with either thermal oxide or plasma-enhanced chemical vapor deposited (PECVD) SiO2. Some of the thermal oxide devices were converted into protruding nozzle structures, and some were boron-doped. Seal formation was tested with cultured N2a neuroblastoma cells. The PECVD oxide devices produced an average seal resistance of 34 M Omega(n = 24), and the thermal oxide devices produced an average seal resistance of 96 M Omega(n = 59). Seal resistance was found to positively correlate with patch aperture depth. Whole-cell recordings were obtained from 14% of cells tested with the thermal oxide devices, including a single recording where a gigaohm seal was obtained.

引用

页码：974 / 983

页数：10

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