Characterization of Al/n-ZnO/p-Si/Al structure with low-cost solution-grown ZnO layer

被引：1

作者：

Cetinkaya, S. ^{[1
]}

Cetinkara, H. A. ^{[1
]}

Kahraman, S. ^{[1
]}

Bayansal, F. ^{[1
]}

机构：

[1] Mustafa Kemal Univ, Dept Phys, TR-31034 Antakya, Turkey

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 2013年 / 93卷 / 09期

关键词：

microelectronics; optical absorption; diffraction; electrical conductivity; ZnO; diode structures; SCLC; SCHOTTKY DIODE; ELECTRICAL CHARACTERISTICS; VOLTAGE CHARACTERISTICS; N-SI; TEMPERATURE; FILMS; CONTACTS; NANORODS;

D O I：

10.1080/09500839.2013.820362

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the fabrication of Al/n-ZnO/p-Si/Al diode structures with a flower-like ZnO layer. The average grain size, microstrain and dislocation density in the ZnO layer were determined as 25nm, 1.55x10(-3) and 3.23x10(13)cm(-2), respectively. From absorption spectra, the optical band gap was found to be approximate to 3.17eV. A red shift was attributed to non-stoichiometry arising from Zn+2 ions substituting for oxygen vacancies. The ideality factor was determined as 1.55. The barrier height was calculated as 0.71eV from I-V characteristics and 0.73eV using the Norde plots.

引用

页码：550 / 559

页数：10

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