Electronic structures of graphene layers on a metal foil: The effect of atomic-scale defects

被引:34
|
作者
Yan, Hui [1 ]
Liu, Cheng-Cheng [2 ,3 ,4 ]
Bai, Ke-Ke [1 ]
Wang, Xuejiao [2 ]
Liu, Mengxi [5 ]
Yan, Wei [1 ]
Meng, Lan [1 ]
Zhang, Yanfeng [5 ,6 ]
Liu, Zhongfan [5 ]
Dou, Rui-fen [1 ]
Nie, Jia-Cai [1 ]
Yao, Yugui [2 ]
He, Lin [1 ]
机构
[1] Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China
[2] Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China
[3] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
[4] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
[5] Peking Univ, Coll Chem & Mol Engn, Ctr Nanochem CNC, Beijing 100871, Peoples R China
[6] Peking Univ, Dept Mat Sci & Engn, Coll Engn, Beijing 100871, Peoples R China
基金
中国国家自然科学基金;
关键词
STRAIN;
D O I
10.1063/1.4824206
中图分类号
O59 [应用物理学];
学科分类号
摘要
Here, we report a facile method to generate a high density of atomic-scale defects in graphene on metal foil and show how these defects affect the electronic structures of graphene layers. Our scanning tunneling microscope measurements, complemented by first-principles calculations, reveal that the atomic-scale defects result in both the intervalley and intravalley scattering of graphene. The Fermi velocity is reduced in the vicinity area of the defect due to the enhanced scattering. (C) 2013 AIP Publishing LLC.
引用
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页数:4
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