Dibenzothiopheno[6,5-b:6′,5′-f]thieno[3,2-b]thiophene (DBTTT): High-Performance Small-Molecule Organic Semiconductor for Field-Effect Transistors

被引:136
作者
Park, Jeong-Il [1 ]
Chung, Jong Won [1 ]
Kim, Joo-Young [1 ]
Lee, Jiyoul [1 ,3 ]
Jung, Ji Young [1 ]
Koo, Bonwon [1 ]
Lee, Bang-Lin [1 ]
Lee, Soon W. [2 ]
Jin, Yong Wan [1 ]
Lee, Sang Yoon [1 ]
机构
[1] Samsung Elect Co Ltd, Samsung Adv Inst Technol, Mat Res Ctr, Suwon 443803, Gyeonggi Do, South Korea
[2] Sungkyunkwan Univ, Dept Chem, Suwon 440746, Gyeonggi Do, South Korea
[3] Pukyong Natl Univ, Coll Engn, Dept Graph Arts Informat Engn, Busan 608739, South Korea
关键词
THIN-FILM TRANSISTORS; HIGH THERMAL-STABILITY; CHARGE-TRANSPORT; CRYSTAL;
D O I
10.1021/jacs.5b01108
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We present the synthesis, characterization, and structural analysis of a thiophene-rich heteroacene, dibenzothiopheno[6,5-b:6',5'-f]thieno[3,2-b]thiophene (DBTTT) as well as its application in field-effect transistors. The design of DBTTT is based on the enhancement of intermolecular charge transfer through strong S-S interactions. Crystal structure analysis showed that the intermolecular pi-pi distance is shortened and that the packing density is higher than those of the electronically equivalent benzene analogue, dinaphtho-[2,3-b:2',3'f]thieno[3,2-b]thiophene (DNTT). The highest hole mobility we obtained in polycrystalline DBTTT thin-film transistors was 19.3 cm(2).V-1.s(-1), six times higher than that of DNTT-based transistors. The observed isotropic angular mobilities and thermal stabilities at temperatures up to 140 degrees C indicate the great potential of DBTTT for attaining device uniformity and processability.
引用
收藏
页码:12175 / 12178
页数:4
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