Solar Cell Efficiency Exceeding 25% through Rb-Based Perovskitoid Scaffold Stabilizing the Buried Perovskite Surface

被引:80
作者
Chen, Jinbo [1 ,2 ]
Dong, Hua [1 ,2 ,8 ]
Li, Jingrui [3 ,4 ,5 ]
Zhu, Xinyi [1 ,2 ]
Xu, Jie [7 ]
Pan, Fang [3 ,4 ,5 ]
Xu, Ruoyao [1 ,2 ]
Xi, Jun [1 ,2 ]
Jiao, Bo [1 ,2 ]
Hou, Xun [1 ,2 ]
Ng, Kar Wei [6 ]
Wang, Shuang-Peng [6 ]
Wu, Zhaoxin [1 ,2 ]
机构
[1] Xi An Jiao Tong Univ, Key Lab Phys Elect & Devices, Minist Educ, Xian 710049, Shaanxi, Peoples R China
[2] Xi An Jiao Tong Univ, Sch Elect & Informat Engn, Shaanxi Key Lab Informat Photon Tech, Xian 710049, Shaanxi, Peoples R China
[3] Xi An Jiao Tong Univ, Elect Mat Res Lab, Key Lab, Minist Educ, Xian 710049, Shaanxi, Peoples R China
[4] Xi An Jiao Tong Univ, Int Ctr Dielect Res, Sch Elect Sci & Engn, Xian 710049, Shaanxi, Peoples R China
[5] Xi An Jiao Tong Univ, Int Joint Lab Micro Nano Mfg & Measurement Technol, Xian 710049, Shaanxi, Peoples R China
[6] Univ Macau, Inst Appl Phys & Mat Engn, Taipa 999078, Macao, Peoples R China
[7] Xian Univ Architecture & Technol, Coll Sci, Xian 710055, Shaanxi, Peoples R China
[8] Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Shanxi, Peoples R China
基金
中国国家自然科学基金;
关键词
HALIDE PEROVSKITES; PHASE SEGREGATION; LEAD IODIDE; PERFORMANCE; ELECTRON; SNO2; RECOMBINATION; RELAXATION; RUBIDIUM; CATIONS;
D O I
10.1021/acsenergylett.2c01661
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The reduction of defect density in perovskite solar cells (PSCs) is the key to suppress the nonradiative recombination, which is critical to achieve high device efficiency. The buried surfaces of perovskite films are more prone to deterioration and defect formation than the bulk and upper surfaces of perovskite films due to continuous solvent and temperature erosion processes. Here, a buried-interface strategy using Rbbased perovskitoids is proposed. The introduction of rubidium halide results in the formation of a deuterogenic Rb-based perovskitoid "scaffold", which effectively enhances the crystallization of the perovskite film and passivates the defects at the buried surface. With this Rb-based perovskitoid strategy, the power conversion efficiency of device increases from 23.26% to 25.14%, thus providing a simple and effective way to improve the performance of PSCs.
引用
收藏
页码:3685 / 3694
页数:10
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