Plasma-Enhanced Storage Capability of SONOS Flash Memory

被引:0
作者
Wu, Chi-Chang [1 ]
Yang, Wen-Luh [2 ]
Chang, Yuan-Ming [2 ,3 ]
Liu, Sheng-Hsien [2 ,3 ]
Hsiao, Yu-Ping [2 ,3 ]
机构
[1] Taipei Med Univ, Grad Inst Biomed Mat & Tissue Engn, Coll Oral Med, Taipei, Taiwan
[2] Feng Chia Univ, Dept Elect Engn, Taichung 40724, Taiwan
[3] Feng Chia Univ, PhD Program Elect & Commun Engn, Taichung 40724, Taiwan
来源
INTERNATIONAL JOURNAL OF ELECTROCHEMICAL SCIENCE | 2013年 / 8卷 / 05期
关键词
SONOS; flash memory; plasma treatment; sol-gel; FILM; LAYER;
D O I
暂无
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
High-kappa thin film is a candidate material for the charge storage layer of non-volatile flash memory. This material can achieve faster programming speeds and better charge-retention performance. This paper reports the fabrication of a Co(x)Hf(y)Si(z)Ohigh-kappa thin film formed by using a sol-gel technique and low-temperature annealing. The proposed fabrication method involves using oxygen plasma treatment to passivate the surface of the high-kappa film and maintain low-temperature formation with high quality. The X-ray analysis presented in this study showed that the CoxHfySizO high-kappa film formed metal-rich cobalt and hafnium silicate after oxygen plasma treatment, thus improving the performance of the CoxHfySizO high-kappa memory by creating more trapping sites. This plasma treatment also improves the memory window from 1.92 to 2.16 V. The retention can decrease to 13% at a 10(6) s measurement, and the memory narrowing for the plasma-treated CoxHfySizO high-kappa memory is 21% after 10(6) program and erase cycles. The sol-gel method resulting CoxHfySizO high-kappa square flash memories show that oxygen plasma treatment improves the memory performance in retention and endurance.
引用
收藏
页码:6678 / 6685
页数:8
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