Superradiant Emission in Semiconductor Diode Laser Structures

被引：8

作者：

Vasil'ev, Peter P. ^{[1
,2
]}

Penty, Richard V. ^{[1
]}

White, Ian H. ^{[1
]}

机构：

[1] Univ Cambridge, Ctr Photon Syst, Cambridge CB3 0FA, England

[2] PN Lebedev Phys Inst, Moscow 119991, Russia

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2013年 / 19卷 / 04期

基金：

英国工程与自然科学研究理事会;

关键词：

Semiconductor lasers; superradiance (SR); ultrashort pulses; DICKE SUPERRADIANCE; GENERATION; SUPERFLUORESCENCE; CONDENSATION; PAIRS; GAAS;

D O I：

10.1109/JSTQE.2012.2234085

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reviews recent advances in superradiant (SR) emission in semiconductors at room temperature, a process which has been shown to enable the generation on demand of high power picosecond or subpicosecond pulses across a range of different wavelengths. The different characteristic features of SR emission from semiconductor devices with bulk, quantum-well, and quantum-dot active regions are outlined, and particular emphasis is placed on comparing the characteristic features of SR with those of lasing. Finally, potential applications of SR pulses are discussed.

引用

页数：10

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