Evolution of photoluminescence life-times distribution in Si-QD/SiO2 multilayer films

被引：0
作者：
Wang, Xinzhan [1 ]
Liu, Yumei [1 ]
Feng, Huina [1 ]
Dai, Wanlei [1 ]
Xu, Yanmei [1 ]
Yu, Wei [1 ]
Fu, Guangsheng [1 ]
机构：
[1] Hebei Univ, Coll Phys Sci & Technol, Baoding 071002, Peoples R China
来源：
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS | 2013年 / 62卷 / 03期
关键词：
SILICON NANOCRYSTALS; EMISSION; LIGHT;
D O I：
10.1051/epjap/2013130126
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Si-rich oxide/SiO2 multilayer films with different N2O flow rates have been deposited by plasma enhanced chemical vapor deposition technique, and Si quantum dot (Si-QD)/SiO2 multilayer films are obtained by 1100 degrees C annealing. Steady photoluminescence (PL) spectra show that the main optical emission mechanism changes from quantum confinement effect of Si-QDs to interface defect states with increasing the flow rate of N2O. Curve fittings of time-resolved PL spectra show that two log-normal decay time distribution bands are obtained, and both the most frequent life-times decrease with increasing the flow rate of N2O, while increase with the red shift of detecting wavelength. Analyses indicate that defect states density and size distribution of Si-QDs strongly influence the PL decay properties.
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页数：5
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