Current induced resistance change of magnetic tunnel junctions with ultra-thin MgO tunnel barriers

被引：22
|
作者：
Krzysteczko, Patryk [1 ]
Kou, Xinli [2 ]
Rott, Karsten [1 ]
Thomas, Andy [1 ]
Reiss, Guenter [1 ]
机构：
[1] Univ Bielefeld, D-33615 Bielefeld, Germany
[2] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2009年 / 321卷 / 03期
关键词：
Diffusion; Electromigration; Tunneling; Current induced switching; Memristive behavior;
D O I：
10.1016/j.jmmm.2008.08.088
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ultra-thin magnetic tunnel junctions with low resistive MgO tunnel barriers are prepared to examine their stability under large current stress. The devices show magnetoresistance ratios of up to 110% and an area resistance product of down to 4.4 Omega mu m(2). If a large current is applied, a reversible resistance change is observed, which can be attributed to two different processes during stressing and one relaxation process afterwards. Here, we analyze the time dependence of the resistance and use a simple model to explain the observed behavior. The explanation is further supported by numerical fits to the data in order to quantify the timescales of the involved phenomena. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：144 / 147
页数：4
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