Quantitative Nanoscale Imaging of Lattice Distortions in Epitaxial Semiconductor Heterostructures Using Nanofocused X-ray Bragg Projection Ptychography

被引：81

作者：

Hruszkewycz, S. O. ^{[1
]}

Holt, M. V. ^{[2
]}

Murray, C. E. ^{[3
]}

Bruley, J. ^{[3
]}

Holt, J. ^{[4
]}

Tripathi, A. ^{[5
]}

Shpyrko, O. G. ^{[5
]}

McNulty, I. ^{[2
]}

Highland, M. J. ^{[1
]}

Fuoss, P. H. ^{[1
]}

机构：

[1] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA

[2] Argonne Natl Lab, Ctr Nanoscale Mat, Argonne, IL 60439 USA

[3] IBM TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

[4] IBM Semicond Res & Dev Ctr, Hopewell Jct, NY 12533 USA

[5] Univ Calif San Diego, Dept Phys, San Diego, CA 92093 USA

来源：

NANO LETTERS | 2012年 / 12卷 / 10期

关键词：

Bragg projection ptychography; strain imaging; coherent X-ray diffraction imaging; silicon-on-insulator devices; SiGe heteroepitaxy; STRAIN ANALYSIS; DIFFRACTION; SI; NANOSTRUCTURES; PATTERNS; STRESS; FIELD;

D O I：

10.1021/nl303201w

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We imaged nanoscale lattice strain in a multilayer semiconductor device prototype with a new X-ray technique, nanofocused Bragg projection ptychography. Applying this technique to the epitaxial stressor layer of a SiGe-on-SOI structure, we measured the internal lattice behavior in a targeted region of a single device and demonstrated that its internal strain profile consisted of two competing lattice distortions. These results provide the strongest nondestructive test to date of continuum modeling predictions of nanoscale strain distributions.

引用

页码：5148 / 5154

页数：7

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