Scanning internal photoemission microscopy for the identification of hot carrier transport mechanisms

被引：5

作者：

Differt, D. ^{[1
]}

Pfeiffer, W. ^{[1
]}

Diesing, D. ^{[2
]}

机构：

[1] Univ Bielefeld, Fak Phys, D-33615 Bielefeld, Germany

[2] Univ Duisburg Essen, Fak Chem, D-45117 Essen, Germany

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 11期

关键词：

INSULATOR-METAL JUNCTIONS; EXCITED ELECTRONS; RELAXATION; EMISSION; DYNAMICS; GAS;

D O I：

10.1063/1.4752734

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Linear and nonlinear internal photoemission in a thin-film metal-insulator-metal heterosystem, i.e., a Ta-TaOx-Ag junction, together with surface reflectivity are mapped with a lateral resolution of better than 5 mu m. The spatial correlation of the different signals and time-resolved internal photoemission spectroscopy reveal excitation mechanisms and ballistic hot carrier injection. The internal photoemission yield variation with Ag layer thickness is quantitatively explained by above-barrier injection. The hot-spot-like behavior of the two-photon induced internal photoemission observed for short pulse excitation is attributed to local field enhancements because of Ag-film thickness reduction and plasmonic effects at structural defects. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4752734]

引用

页数：4

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