Enhancing threshold voltage of AlGaN/GaN high electron mobility transistors by nano rod structure: From depletion mode to enhancement mode

被引：7

作者：

Xuan, Rong ^{[1
,2
]}

Kuo, Wei-Hong ^{[1
]}

Hu, Chih-Wei ^{[1
]}

Lin, Suh-Fang ^{[1
]}

Chen, Jenn-Fang ^{[2
]}

机构：

[1] Ind Technol Res Inst, Elect & Optoelect Res Labs, Hsinchu 310, Taiwan

[2] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 11期

关键词：

GAN;

D O I：

10.1063/1.4752113

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper presents an approach in fabricating normally off AlGaN/GaN high electron mobility transistors (HEMTs). The fabrication technique was based on the carbon-doped GaN epitaxy layers on silicon substrate and the nano rod structure of the gate region in AlGaN/GaN HEMTs. Using this method, the threshold voltage of AlGaN/GaN HEMTs can be shifted from -2 V in a conventional depletion-mode (D-mode) AlGaN/GaN HEMT to 2 V in an enhancement-mode (E-mode) AlGaN/GaN HEMT. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4752113]

引用

页数：3

共 11 条

[1] Nanoimprint lithography: Methods and material requirements
Guo, L. Jay
[J]. ADVANCED MATERIALS, 2007, 19 (04) : 495 - 513
[2] Heying B, 1996, APPL PHYS LETT, V68, P643, DOI 10.1063/1.116495
[3] Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3 -: art. no. 252104
Huang, ML
Chang, YC
Chang, CH
Lee, YJ
Chang, P
Kwo, J
Wu, TB
Hong, M
[J]. APPLIED PHYSICS LETTERS, 2005, 87 (25) : 1 - 3
[4] Enhancement-mode AlGaN/GaN HEMTs on silicon substrate
Jia, Shuo
Cai, Yong
Wang, Deliang
Zhang, Baoshun
Lau, Kei May
Chen, Kevin J.
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (06) : 1474 - 1477
[5] Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High-k Gate Dielectrics
Kanamura, Masahito
Ohki, Toshihiro
Kikkawa, Toshihide
Imanishi, Kenji
Imada, Tadahiro
Yamada, Atsushi
Hara, Naoki
[J]. IEEE ELECTRON DEVICE LETTERS, 2010, 31 (03) : 189 - 191
[6] Nanopatterning of photonic crystals with a photocurable silica-titania organic-inorganic hybrid material by a UV-based nanoimprint technique
Kim, WS
Yoon, KB
Bae, BS
[J]. JOURNAL OF MATERIALS CHEMISTRY, 2005, 15 (42) : 4535 - 4539
[7] Effect of carbon doping on crystal quality, electrical isolation and electron trapping in GaN based structures grown silicon substrates
Ramdani, Mohammed R.
Chmielowska, Magdalena
Cordier, Yvon
Chenot, Sebastien
Semond, Fabrice
[J]. SOLID-STATE ELECTRONICS, 2012, 75 : 86 - 92
[8] Recessed-gate structure approach toward normally off high-voltage AlGaN/GaN HEMT for power electronics applications
Saito, W
Takada, Y
Kuraguchi, M
Tsuda, K
Omura, I
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (02) : 356 - 362
[9] Properties of carbon-doped GaN
Tang, H
Webb, JB
Bardwell, JA
Raymond, S
Salzman, J
Uzan-Saguy, C
[J]. APPLIED PHYSICS LETTERS, 2001, 78 (06) : 757 - 759
[10] Gate injection transistor (GIT) - A normally-off AlGaN/GaN power transistor using conductivity modulation
Uemoto, Yasuhiro
Hikita, Masahiro
Ueno, Hiroaki
Matsuo, Hisayoshi
Ishida, Hidetoshi
Yanagihara, Manabu
Ueda, Tetsuzo
Tanaka, Tsuyoshi
Ueda, Daisuke
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (12) : 3393 - 3399

← 1 2 →