Effect of silicon doping on electrical and optical properties of stoichiometric Cu2ZnSnS4 solar cells

被引：16

作者：

Guo, Huafei ^{[1
]}

Li, Yan ^{[1
,3
]}

Guo, Xiaohai ^{[1
]}

Yuan, Ningyi ^{[1
]}

Ding, Jianning ^{[1
,2
]}

机构：

[1] Changzhou Univ, Sch Mat Sci & Engn, Jiangsu Collaborat Innovat Ctr Photovolta Sci & E, Jiangsu Prov Cultivat Base State Key Lab Photovol, Changzhou 213164, Peoples R China

[2] Jiangsu Univ, Micro Nano Sci & Technol Ctr, Zhenjiang 212013, Peoples R China

[3] Changzhou Vocat Inst Light Ind, Changzhou 213164, Jiangsu, Peoples R China

来源：

PHYSICA B-CONDENSED MATTER | 2018年 / 531卷

基金：

中国国家自然科学基金;

关键词：

Si doping; Cu2ZnSnS4 thin film; Sputtering; Mobility; Solar cell; THIN-FILM; ABSORBER; CU2ZNSN(S; SE)(4); GROWTH;

D O I：

10.1016/j.physb.2017.12.016

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

To enhance the conversion efficiency of CZTS solar cells, both large grains with few defects and high carrier mobility are important. Here, For improving the grain sizes and hole mobility silicon (Si) was doped into the CZTS films. The influence of the Si doping concentration on the CZTS film macro- and microstructures is examined using X-ray diffraction and scanning electron microscopy. In addition, the optical and electrical properties of the CZTS thin films with different Si doping concentrations are examined. Finally, a 2.53% efficiency was obtained while the Si doping concertation is 0.65%.

引用

页码：9 / 15

页数：7

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