Current collapseless high-voltage GaN-HEMT and its 50-W boost converter operation

被引：20

作者：

Saito, Wataru ^{[1
]}

Kuraguchi, Masahiko

Takada, Yoshiharu

Tsuda, Kunio

Saito, Yasunobu ^{[1
]}

Omura, Ichiro ^{[1
]}

Yamaguchi, Masakazu ^{[1
]}

机构：

[1] Toshiba Co Ltd, Saiwai Ku, 1 Komukai Toshiba Cho, Kawasaki, Kanagawa 2128583, Japan

来源：

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2007年

关键词：

D O I：

10.1109/IEDM.2007.4419087

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Suppression of the on-resistance modulation caused by the current collapse phenomena in the high-voltage GaN-HEMT was successful by using dual-field plate (FP) structure and back-side FP, A 480-V/2A GaN-HEMT was designed and fabricated for power electronic applications. In this device, the on-resistance modulation was negligible as low as 5% even under an applied voltage of 300 V Boost converter circuit was demonstrated using the fabricated device with an output power of 54 W, high power efficiency of 92.7% and high switching frequency of 1 MHz.

引用

页码：869 / +

页数：2

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