Fabrication of AlGaN Two-Dimensional Photonic Crystal Nanocavities by Selective Thermal Decomposition of GaN

被引：42

作者：

Arita, Munetaka ^{[1
]}

Kako, Satoshi ^{[2
]}

Iwamoto, Satoshi ^{[1
,2
]}

Arakawa, Yasuhiko ^{[1
,2
]}

机构：

[1] Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538505, Japan

[2] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

来源：

APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 12期

基金：

日本学术振兴会;

关键词：

LIGHT-EMITTING-DIODES; SINGLE-QUANTUM-DOT; NITRIDE; BLUE; SAPPHIRE; LASER;

D O I：

10.1143/APEX.5.126502

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the successful fabrication of InGaN/AlGaN single-quantum-well two-dimensional photonic crystal nanocavities with excellent structural properties by means of a novel method. GaN can be selectively decomposed at around 1000 degrees C under NH3/H-2 ambient conditions, leaving air-bridge AlGaN membranes. The proposed method is remarkably simple and offers various advantages such as good crystalline quality and smooth surfaces over those previously reported. The high quality of the nanocavities has been proven by microscopic photoluminescence: quality factors as high as 5100 have been achieved with a 180-nm-period L7 nanocavity at room temperature. (C) 2012 The Japan Society of Applied Physics

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页数：3

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