Phase-change electrical memory elements and devices

被引：0
|
作者：
Popescu, M. [1 ]
Lorinczi, A. [1 ]
Sava, F. [1 ]
Velea, A. [1 ]
Matei, E. [1 ]
Socol, G. [2 ]
Mihailescu, I. N. [2 ]
机构：
[1] Natl Inst Mat Phys, Bucharest, Romania
[2] Natl Inst Lasers Plasma & Radiat Phys, Bucharest, Romania
来源：
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2008年 / 10卷 / 10期
关键词：
Phase-change material; Chalcogenide; Ge-Sb-Te; Memory element; Memory device; Voltage-current characteristics;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Electrical memory elements based on Ge-Sb-Te pure and doped by Sn-Se have been obtained by pulsed laser deposition on special substrates covered by gold as well as on common glass. A set of electrical memory elements in a 4x4 matrix structure on the glass substrate has been produced. Devices with 3 and 10 memory elements have been constructed and tested for their memory properties. The special features of the voltage-current characteristics have been revealed.
引用
收藏
页码：2616 / 2621
页数：6
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