Large area 1200 V SiC BJTs with β>100 and ρON<3 mΩcm2

被引：13

作者：

Domeij, Martin ^{[1
]}

Konstantinov, Andrei ^{[1
]}

Lindgren, Anders ^{[1
]}

Zaring, Carina ^{[1
]}

Gumaelius, Krister ^{[1
]}

Reimark, Mats ^{[1
]}

机构：

[1] Fairchild Semicond, SE-16440 Kista, Sweden

来源：

SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 | 2012年 / 717-720卷

关键词：

BJT; current gain; on-resistance; switching; short-circuit; avalanche; HIGH-CURRENT GAIN; 4H-SIC BJTS;

D O I：

10.4028/www.scientific.net/MSF.717-720.1123

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Large (4.3 mm(2)) area SiC BJTs were demonstrated with a current gain of 117 and a specific on-resistance of 2.8 m Omega cm(2). The open-base and open-emitter breakdown voltages are stable and with margin sufficient for 1200 V blocking. Fast and tail-current free switching behaviour was shown with rise- and fall-times in the range of 10-30 ns and the SiC BJTs were shown to be rugged in short-circuit and unclamped inductive switching.

引用

页码：1123 / 1126

页数：4

共 5 条

[1] 1200 V SiC BJTs with low VCESAT and high temperature capability
Domeij, M.
Lindgren, A.
Zaring, C.
Konstantinov, A.
Gumaelius, K.
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Keri, I.
Svedberg, J-O
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Agarwal, A
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[4] 4H-SiC BJTs With Record Current Gains of 257 on (0001) and 335 on (0001)
Miyake, Hiroki
Kimoto, Tsunenobu
Suda, Jun
[J]. IEEE ELECTRON DEVICE LETTERS, 2011, 32 (07) : 841 - 843
[5] 1600 V, 5.1 mΩ.cm2 4H-SiC BJT with a High Current Gain of β=70
Zhang, Jianhui
Alexandrov, Petre
Zhao, Jian H.
[J]. SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 1155 - +

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Large area 1200 V SiC BJTs with β&gt;100 and ρON&lt;3 mΩcm2

Large area 1200 V SiC BJTs with β>100 and ρON<3 mΩcm2