Triple Junction Transport and the Impact of Grain Boundary Width in Nanocrystalline Cu

被引：51

作者：

Chellali, Mohammed Reda ^{[1
]}

Balogh, Zoltan ^{[1
]}

Bouchikhaoui, Houari ^{[1
]}

Schlesiger, Ralf ^{[1
]}

Stender, Patrick ^{[1
]}

Zheng, Lei ^{[1
]}

Schmitz, Guido ^{[1
]}

机构：

[1] Univ Munster, Inst Mat Phys, D-48149 Munster, Germany

来源：

NANO LETTERS | 2012年 / 12卷 / 07期

关键词：

Nanocrystalline metals; grain boundary diffusion; triple junction transport; grain boundary width; atom probe tomography; CuNi; MOLECULAR-DYNAMICS SIMULATION; THIN-FILMS; ATOM-PROBE; DIFFUSION; COPPER; METALS; NICKEL; SUPERLATTICES; TEMPERATURES; DEFORMATION;

D O I：

10.1021/nl300751q

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Triple junctions (TJ), singular topological defects of the grain boundary (GB) structure, get a dominant role for grain growth and atomic transport in nanocrystalline matter. Here, we present detailed measurements by atom probe tomography, even of the temperature dependence of TJ transport of Ni in nanocrystalline Cu in the chemical regime of interdiffusion. An unexpected variation of the effective width of merging GBs with temperature is detected. It is demonstrated that proper measurement of TJ transport requires taking into account this remarkable effect. TJ diffusion is found to be a factor of about 200 faster than GB diffusion. Its activation energy amounts to only two-thirds of that of the GB.

引用

页码：3448 / 3454

页数：7

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