Ultrafast electron cascades in semiconductors driven by intense femtosecond terahertz pulses

被引：104

作者：

Wen, H. ^{[1
]}

Wiczer, M. ^{[3
]}

Lindenberg, A. M. ^{[1
,2
]}

机构：

[1] Stanford Linear Accelerator Ctr, PULSE Inst, Menlo Pk, CA 94025 USA

[2] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

[3] Univ Illinois, Dept Phys, Urbana, IL 61801 USA

来源：

PHYSICAL REVIEW B | 2008年 / 78卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.78.125203

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An ultrafast terahertz (THz) source has been employed to study the nonlinear response of semiconductors to near-half-cycle femtosecond pulses in the THz regime. We report nonlinear absorption and self-phase modulation of the THz pulses associated with ultrafast impact ionization processes and the development of an electron cascade on femtosecond time scales by THz pump-THz probe measurements.

引用

页数：6

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