Nanoparticle process formation in zinc implanted silicon with followed thermal annealing

被引：3

作者：

Privezentsev, V. V. ^{[1
]}

Kulikauskas, V. S. ^{[2
]}

Zatekin, V. V. ^{[2
]}

Chernykh, P. N. ^{[2
]}

Petrov, D. V. ^{[2
]}

Makunin, A. V. ^{[2
]}

Shcherbachev, K. D. ^{[3
]}

机构：

[1] Russian Acad Sci, Inst Phys & Technol, Moscow 117218, Russia

[2] Moscow MV Lomonosov State Univ, Skobeltsyn Inst Nucl Phys, Moscow 119991, Russia

[3] Natl Res Technol Univ, Moscow Inst Steel & Alloys, Moscow 119049, Russia

来源：

JOURNAL OF SURFACE INVESTIGATION | 2012年 / 6卷 / 02期

关键词：

Atomic force microscopy - Ion implantation - Silicon - X ray diffraction - Zinc - Backscattering - Substrates;

D O I：

10.1134/S102745101204012X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Results of temperature treatment effect on near surface layer properties of Zn ion implanted Si substrate are presented. Radiation induced point defects and Zn in depth profile was studied by Rutherford back scattering (RBS) method with use of channeling technique. Topology of substrate surface was studied by atomic force microscopy (AFM) and scaning electron microscope (SEM). Phase composition of samples was test by x-ray diffraction in grazing geometry.

引用

页码：314 / 318

页数：5

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